产品详情
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产品属性 |
属性值 |
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Product Attribute |
Attribute Value |
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制造商: |
IXYS |
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产品种类: |
MOSFET |
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RoHS: |
YES |
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技术: |
Si |
HiPerFETTM V DSS I D25 R DS(on)
Power MOSFETs IXFK 90 N 20 200 V 90 A 23 mW
IXFN 100 N 20 200 V 100 A 23 mW
N-Channel Enhancement Mode IXFN 106 N 20 200 V 106 A 20 mW
Avalanche Rated, High dv/dt, Low trr trr £ 200 ns
TO-264 AA
Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK)
IXFK IXFN IXFN
90N20 100N20 106N20
VDSS TJ = 25°C to 150°C 200 200 200 V (TAB)
VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 200 200 V G
D S
VGS Continuous ±20 ±20 20 V
VGSM Transient ±30 ±30 20 V miniBLOC, SOT-227 B (IXFN)
E153432 S
ID25 TC = 25°C, Chip capability 90 100 106 A
I T = 80°C, limited by external leads 76 - A D G
D80 C
IDM T C = 25°C, pulse width limited by T JM 360 400 424 A
I T = 25°C 50 50 A G
AR C S
EAR TC = 25°C 30 30 30 mJ S D
S
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 5 5 V/ns
TJ £ 150°C, RG = 2 W G = Gate D = Drain
S = Source TAB = Drain
PD TC = 25°C 500 520 W Either Source terminal at miniBLOC can be used
T -55 ... +150 °C as Main or Kelvin Source
J
TJM 150 °C
Tstg -55 ... +150 °C Features
l International standard packages
TL 1.6 mm (0.063 in) from case for 10 s 300 - °C q JEDEC TO-264 AA, epoxy meet
VISOL 50/60 Hz, RMS t = 1 min - 2500 V~ UL 94 V-0, flammability classification
I £ 1 mA t=1s - 3000 V~ q miniBLOC with Aluminium nitride
ISOL isolation
Md Mounting torque 0.9/6 1.5/13 Nm/lb.in. q Low R HDMOSTM process
DS (on)
Terminal connection torque - 1.5/13 Nm/lb.in. q Rugged polysilicon gate cell structure
Weight 10 30 g q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Applications
min. typ. max. q DC-DC converters
q Synchronous rectification
VDSS VGS = 0 V, ID = 1 mA 200 V q Battery chargers
VGH(th) VDS = VGS, ID = 8 mA 2 4 V q Switched-mode and resonant-mode
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA power supplies
q DC choppers
IDSS VDS = 0.8 • VDSS TJ = 25°C 400 mA q Temperature and lighting controls
VGS =0V TJ = 125°C 2 mA q Low voltage relays
R DS(on) V GS = 10 V, I D = 0.5 • I D25 Advantages
Pulse test, t £ 300 ms, IXFK90N20 0.023 W q Easy to mount
duty cycle d £ 2 % IXFN100N20 0.023 W q Space savings
IXFN106N20 0.020 W q High power density
IXYS reserves the right to change limits, test conditions, and dimensions. 92804H (7/97)
© 2000 IXYS All rights reserved 1-4
IXFK100N20 IXFN90N20 IXFN106N20
Symbol Test Conditions Characteristic Values TO-264 AA Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 60 S
Ciss 9000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 pF
Crss 590 pF
td(on) 30 ns
tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 ns
td(off) RG = 1 W (External), 75 ns Dim. Millimeter Inches
tf 30 ns Min. Max. Min. Max.
A 4.82 5.13 .190 .202
Qg(on) 380 nC A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 70 nC b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
Qgd 190 nC b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
RthJC TO-264 AA 0.25 K/W E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
RthCK TO-264 AA 0.15 K/W J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
RthJC miniBLOC, SOT-227 B 0.24 K/W L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
RthCK miniBLOC, SOT-227 B 0.05 K/W P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
Source-Drain Diode Characteristic Values R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
(TJ = 25°C, unless otherwise specified) T 1.57 1.83 .062 .072
Symbol Test Conditions min. typ. max.
IS VGS =0V IXFK90N20 90 A miniBLOC, SOT-227 B
IXFN100N20 100 A
IXFN106N20 106 A
IXFK90N20
ISM Repetitive; IXFN100N20 360 A
pulse width limited by TJM IXFN106N20 424 A
V SD I F = 100 A, V GS =0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 200 ns
QRM IF = 50 A, -di/dt = 100 A/ms, VR = 100 V 3 mC
IRM 38 A M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
© 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2-4
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXFK100N20 IXFN90N20 IXFN106N20
Fig. 1 Output Characteristics Fig. 2 Input Admittance
200 9V 200
180 VGS = 10V 180
TJ = 25°C 8V
160 7V 160
Amperes 140 Amperes 140 TJ = 25°C
120 6V 120
100 100
- 80 - 80
ID ID 60
60
40 5V 40
20 20
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts VGS - Volts
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
2.6 2.50 of Drain to Source Resistance
TJ = 25°C
2.4 2.25
Normalized 2.2 Normalized 2.00
2.0 1.75
1.8 VGS = 10V ID = 53A
1.50
- 1.6 -
RDS(on) 1.4 RDS(on) 1.25
1.2 1.00
1.0 VGS = 15V 0.75
0.8 0.50
0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150
ID - Amperes TJ - Degrees C
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
120 1.2
106N20 VGS(th) BVDSS
100 1.1
80 90N20 BV/VG(th) - Normalized 1.0
ID - Amperes 0.9
60
0.8
40 0.7
20 0.6
0 0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TC - Degrees C TJ - Degrees C
© 2000 IXYS All rights reserved 3-4
IXFK100N20 IXFN90N20 IXFN106N20
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
9000 Ciss
14 8000
VDS = 100V
12 ID = 50A 7000
10 IG = 10mA pF 6000 f = 1MHz
VGE - Volts Capacitance - VDS = 25V
8 5000
6 4000
3000 Coss
4 2000
2 1000 Crss
0 0
0 50 100 150 200 250 300 350 400 0 5 10 15 20 25
Gate Charge - nCoulombs VDS - Volts
Fig.9 Source Current vs. Source
100 to Drain Voltage
80
ID - Amperes 60 TJ = 125°C
40
TJ = 25°C
20
0
0.4 0.6 0.8 1.0 1.2
VSD - Volts
Fig.10 Transient Thermal Impedance
0.5
Thermal Response - K/W 0.1
0.01
0.001 0.01 0.1 1
Pulse Width - Seconds
© 2000 IXYS All rights reserved 4 - 4
Mouser Electronics
Authorized Distributor
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IXYS:
IXFK90N20 IXFN106N20 IXFN100N20
